IndiumV3, Main, Repository, bibRecord, 01CD51

Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization

Identifieur interne : 01CD51 ( Main/Repository ); précédent : 01CD50; suivant : 01CD52

Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization

Auteurs : RBID : Pascal:95-0396262

Descripteurs français

Pascal (Inist)
- Couche mince, Polycristal, Cuivre, Procédé dépôt, Cellule solaire, Thiocyanate, Cuivre complexe, Composé organométallique, Méthode électrochimique, Semiconducteur, Semiconducteur type p, Etude expérimentale, 6855G.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Copper, Copper complexes, Deposition process, Electrochemical method, Experimental study, Organometallic compounds, P-type conductors, Polycrystals, Semiconductor materials, Solar cells, Thin films, Thiocyanates.

Abstract

A method is given for electrochemical deposition of thin polycrystalline films of cuprous thiocyanate (p-type semiconductor, band gap = 3.6 eV) on conducting indium-tin oxide glass. Dye-sensitization of the surface with methyl violet and construction of a photoelectrochemical cell are described. The investigation demonstrates the usefulness of unconventional high band gap semiconductors in studying dye-sensitization.

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Pascal:95-0396262

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization</title>
<author><name sortKey="Tennakone, K" uniqKey="Tennakone K">K. Tennakone</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Inst. fundamental studies</s1>
<s2>Kandy</s2>
<s3>SLE</s3>
</inist:fA14>
<country>Sierra Leone</country>
<wicri:noRegion>Inst. fundamental studies</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kumarasinghe, A R" uniqKey="Kumarasinghe A">A. R. Kumarasinghe</name>
</author>
<author><name sortKey="Sirimanne, P M" uniqKey="Sirimanne P">P. M. Sirimanne</name>
</author>
<author><name sortKey="Kumara, G R R A" uniqKey="Kumara G">G. R. R. A. Kumara</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">95-0396262</idno>
<date when="1995">1995</date>
<idno type="stanalyst">PASCAL 95-0396262 INIST</idno>
<idno type="RBID">Pascal:95-0396262</idno>
<idno type="wicri:Area/Main/Corpus">01C449</idno>
<idno type="wicri:Area/Main/Repository">01CD51</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper</term>
<term>Copper complexes</term>
<term>Deposition process</term>
<term>Electrochemical method</term>
<term>Experimental study</term>
<term>Organometallic compounds</term>
<term>P-type conductors</term>
<term>Polycrystals</term>
<term>Semiconductor materials</term>
<term>Solar cells</term>
<term>Thin films</term>
<term>Thiocyanates</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Polycristal</term>
<term>Cuivre</term>
<term>Procédé dépôt</term>
<term>Cellule solaire</term>
<term>Thiocyanate</term>
<term>Cuivre complexe</term>
<term>Composé organométallique</term>
<term>Méthode électrochimique</term>
<term>Semiconducteur</term>
<term>Semiconducteur type p</term>
<term>Etude expérimentale</term>
<term>6855G</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A method is given for electrochemical deposition of thin polycrystalline films of cuprous thiocyanate (p-type semiconductor, band gap = 3.6 eV) on conducting indium-tin oxide glass. Dye-sensitization of the surface with methyl violet and construction of a photoelectrochemical cell are described. The investigation demonstrates the usefulness of unconventional high band gap semiconductors in studying dye-sensitization.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>261</s2>
</fA05>
<fA06><s2>1-2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TENNAKONE (K.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KUMARASINGHE (A. R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SIRIMANNE (P. M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KUMARA (G. R. R. A.)</s1>
</fA11>
<fA14 i1="01"><s1>Inst. fundamental studies</s1>
<s2>Kandy</s2>
<s3>SLE</s3>
</fA14>
<fA20><s1>307-310</s1>
</fA20>
<fA21><s1>1995</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000051394570490</s5>
</fA43>
<fA44><s0>0000</s0>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>95-0396262</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A method is given for electrochemical deposition of thin polycrystalline films of cuprous thiocyanate (p-type semiconductor, band gap = 3.6 eV) on conducting indium-tin oxide glass. Dye-sensitization of the surface with methyl violet and construction of a photoelectrochemical cell are described. The investigation demonstrates the usefulness of unconventional high band gap semiconductors in studying dye-sensitization.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55G</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Procédé dépôt</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Deposition process</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="GER"><s0>Beschichtungsverfahren</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Procedimiento revestimiento</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Cellule solaire</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Solar cells</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Thiocyanate</s0>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Thiocyanates</s0>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Cuivre complexe</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Copper complexes</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Composé organométallique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Organometallic compounds</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Méthode électrochimique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Electrochemical method</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Método electroquímico</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Semiconducteur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Semiconductor materials</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="GER"><s0>Halbleiter</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur type p</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>P-type conductors</s0>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>6855G</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fN21><s1>219</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization

Deposition of thin polycrystalline films of cuprous thiocyanate on conducting glass and photoelectronical dye-sensitization

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri